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17 March 2023 Characteristics of transfer printable GaSb laser diodes and gain devices for 2 to 3 µm integrated photonics
Jukka Viheriälä, Heidi Tuorila, Helmer Piirilä, Eero Koivusalo, Joonas Hilska, Mircea Guina, Yeasir Arafat, Fatih Atar, Brian Corbett
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Proceedings Volume PC12424, Integrated Optics: Devices, Materials, and Technologies XXVII; PC124240D (2023) https://doi.org/10.1117/12.2645147
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We present for the first time transfer printable GaSb laser diode and semiconductor optical amplifier coupons. Device coupons show excellent device characteristics with little or no penalty associated to specific integration features required by transfer print process. Transferring of devices on silicon substrate containing a waveguide structure is shown and preliminary results from transferred devices show CW lasing around 2 µm wavelength and light coupling to a waveguide on integrated photonic circuit. The fabrication methodology enables a wide variety of GaSb devices towards highly integrated photonics applications in environmental sensing, bio marker identification and industrial monitoring.
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Jukka Viheriälä, Heidi Tuorila, Helmer Piirilä, Eero Koivusalo, Joonas Hilska, Mircea Guina, Yeasir Arafat, Fatih Atar, and Brian Corbett "Characteristics of transfer printable GaSb laser diodes and gain devices for 2 to 3 µm integrated photonics", Proc. SPIE PC12424, Integrated Optics: Devices, Materials, and Technologies XXVII, PC124240D (17 March 2023); https://doi.org/10.1117/12.2645147
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KEYWORDS
Gallium antimonide
Integrated photonics
Semiconductor lasers
Photonic integrated circuits
Pollution control
Reflectivity
Semiconductor optical amplifiers
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