CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12421 > Article
Presentation
21 March 2023 Optimization of bevelled mesa fabrication process for vertical GaN p-n diodes
Jarosław Tarenko, Maciej Kamiński, Renata Kruszka, Magdalena Zadura, Andrzej Taube, Marek Ekielski, Joanna Jankowska-Śliwińska, Anna Szerling, Paweł Prystawko, Michał Boćkowski, Izabella Grzegory
Author Affiliations +
Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648891
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Low angle bevelled-mesa structures are crucial for development of high quality GaN p-n high voltage diodes and photodetectors. However, there is lack of details of development of such a process in the literature. Here in this work, we present results of optimization of bevelled mesa fabrication process for vertical GaN p-n diodes using plasma etching through photoresist mask prepared using reflow process. Developed process of formation of low angle bevelled mesa structures was integrated in the vertical GaN p-n diodes on bulk GaN substrates fabrication process. Very low leakage current density below 10-9 A/cm2 and very high Ion/Ioff current ratio over 1013 was obtained. Low values of ideality factor down to 1.5 were obtained as well. These prove applicability of developed process in technology of vertical GaN p-n diodes on bulk gallium nitride substrates.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Jarosław Tarenko, Maciej Kamiński, Renata Kruszka, Magdalena Zadura, Andrzej Taube, Marek Ekielski, Joanna Jankowska-Śliwińska, Anna Szerling, Paweł Prystawko, Michał Boćkowski, and Izabella Grzegory "Optimization of bevelled mesa fabrication process for vertical GaN p-n diodes", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648891
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Gallium nitride
Diodes
Photomasks
Photoresist materials
Etching
Photoresist developing
Profilometers
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top