Mr. Jaroslaw Tarenko Profile

Jaroslaw Tarenko

at Łukasiewicz - IMiF

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 21 March 2023 Presentation

Optimization of low resistivity Ti/Al/TiN/Au ohmic contacts to buffer-free AlGaN/GaN high electron mobility transistor structures

Maciej Kaminski, Oskar Sadowski, Andrzej Taube, Marek Ekielski, Jarosław Tarenko, Magdalena Zadura, Marek Wzorek, Anna Szerling

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648930

KEYWORDS: Transistors, Annealing, Field effect transistors, Metals, Resistance, Gallium nitride, Transmission electron microscopy, Tin, Scanning electron microscopy, Microwave radiation

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Proceedings Article | 21 March 2023 Presentation

Study of ultra high pressure annealing of Si-implanted GaN epilayers with different ion fluences

Andrzej Taube, Oskar Sadowski, Iwona Sankowska, Karolina Pągowska, Marek Ekielski, Paweł Michałowski, Joanna Jankowska-Śliwińska, Jarosław Tarenko, Anna Szerling, Paweł Prystawko, Kacper Sierakowski, Piotr Jaroszyński, Michał Boćkowski, Izabella Grzegory

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648902

KEYWORDS: Gallium nitride, Annealing, Ions, Silicon, Diffusion, Magnesium, Ion implantation, Chemical species, X-ray diffraction, Surface roughness

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Proceedings Article | 21 March 2023 Presentation

Optimization of bevelled mesa fabrication process for vertical GaN p-n diodes

Jarosław Tarenko, Maciej Kamiński, Renata Kruszka, Magdalena Zadura, Andrzej Taube, Marek Ekielski, Joanna Jankowska-Śliwińska, Anna Szerling, Paweł Prystawko, Michał Boćkowski, Izabella Grzegory

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648891

KEYWORDS: Gallium nitride, Diodes, Photomasks, Photoresist materials, Photoresist developing, Etching, Semiconductors, Scanning electron microscopy, Reactive ion etching, Profilometers

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Proceedings Article | 5 March 2022 Poster

Development of high-power normally-off p-GaN gate AlGaN/GaN high-electron mobility transistors

Anna Szerling, Andrzej Taube, Maciej Kaminski, Marek Ekielski, Jarosław Tarenko, Karolina Pągowska, Maciej Kozubal, Kamil Kosiel, Renata Kruszka, Krystyna Golaszewska-Malec, Ernest Brzozowski, Norbert Kwietniewski, Ryszard Kisiel

Proceedings Volume PC12001, PC120011L (2022) https://doi.org/10.1117/12.2611724

KEYWORDS: Transistors, Field effect transistors, Iron, Gallium nitride, Etching, Silica, Resistance, Electronics, Silicon carbide, Semiconductor manufacturing

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