Paper
20 March 2015 Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL
Takumi Toida, Akihiro Suzuki, Naoya Uchiyama, Takashi Makinoshima, Masaaki Takasuka, Takashi Sato, Masatoshi Echigo
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Abstract
In this paper, we report the development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL. The new xanthendiol derivatives were easily synthesized by the condensation of aldehydes and dihydroxyaromatic compounds. We found 13,13’-biphenyl-bis(13H-benzoxanthen-2,11-diol) was showed the good applicability to the raw material for the resist for EB/EUVL. The EB patterning result showed the resist containing xanthendiol derivative could resolve the 20 nm half-pitch pattern, and 15 nm half-pitch patterns were partially resolved.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takumi Toida, Akihiro Suzuki, Naoya Uchiyama, Takashi Makinoshima, Masaaki Takasuka, Takashi Sato, and Masatoshi Echigo "Development of new xanthendiol derivatives applied to the negative-tone molecular resists for EB/EUVL", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251L (20 March 2015); https://doi.org/10.1117/12.2085470
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Cited by 2 scholarly publications.
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KEYWORDS
Industrial chemicals

Chemical analysis

Raw materials

Extreme ultraviolet lithography

Line edge roughness

Electron beam lithography

Semiconducting wafers

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