"Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study

Aurélien Fay; Ndeye Arame Thiam; Marie-Laure Cordini; Isabelle Servin; Christophe Constancias; Ludovic Lattard; Laurent Pain

doi:10.1117/12.2085832

19 March 2015 "Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study

Aurélien Fay, Ndeye Arame Thiam, Marie-Laure Cordini, Isabelle Servin, Christophe Constancias, Ludovic Lattard, Laurent Pain

Author Affiliations +

Proceedings Volume 9423, Alternative Lithographic Technologies VII; 94231Q (2015) https://doi.org/10.1117/12.2085832
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In addition to sub-20 nm technology nodes, multi-beam lithography at low-energy has also the capability to address mature CMOS technologies [130-45nm nodes] with high throughput and significant manufacturing costs reduction. It requires both “fast” resists for throughput gain and cost of ownership and “thick” resists matched with the current post-lithography processes such as etching and implant steps. We successfully demonstrated patterning of 45-130 nm nodes structures on different thick resists (up to 160 nm) with a 5 keV Mapper pre-alpha tool. In parallel, we developed a theoretical model to simulate 3D patterning showing good agreement with our experimental results.

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Aurélien Fay, Ndeye Arame Thiam, Marie-Laure Cordini, Isabelle Servin, Christophe Constancias, Ludovic Lattard, and Laurent Pain ""Fast" and "thick" e-beam resists exposed with multi-beam tool at 5 keV for implants and mature nodes: experimental and simulated model study", Proc. SPIE 9423, Alternative Lithographic Technologies VII, 94231Q (19 March 2015); https://doi.org/10.1117/12.2085832

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