Atmospheric composition varies both spatially and temporally, notably in terms of relative humidity and greenhouse gases. Current methods rely on massive and expensive sensors deployed sparsely. Here, we are interested in developing a multi-gas sensor that targets very small atmospheric composition variations. In addition, it intends to be gas specific, lightweight, autonomous and compact. Targeted gases are either greenhouse gases such as CO2, CH4 , and N2O, or toxic gases such as CO and SO2. For this purpose, we have developed a Photoacoustic Spectroscopy sensor, using Mid Infrared QCL laser sources, which achieve a very narrow spectral linewidth and have a good potential for miniaturization. We developed a dedicated electronic device to perform data acquisition. Our prototype is beginning its calibration phase in a lab environment, prior further integration for real time measurement.
Owing to their direct band gaps, (Si)GeSn all-group-IV alloys are promising candidates for light sources, photodetectors and modulators monolithically integrated onto a CMOS-compatible mid-infrared photonic platform. Several research teams have demonstrated optically pumped GeSn lasers, and, more recently, an electrically pumped GeSn laser at low operating temperature. Here, we studied Ge0.85Sn0.15-based light emitting diodes (LEDs) and photodiodes (PDs) operating at room temperature. The stack was grown on a p-doped Ge strain-relaxed buffer at low growth temperatures (below 350°C) in a 200 mm chemical vapor deposition tool. Fabricated GeSn devices were characterized at room temperature with a Fourier-transform infrared spectrometer (FTIR) and an InSb detector. The spectral response of the FTIR InSb detector was calibrated with respect to a Deuterated Triglycine Sulfate detector (DTGS). This spectral response was then used to correct Ge0.85Sn0.15 LEDs emission spectra with emission maximum at 3.3 μm. The cutoff wavelength at 3.7 μm of the GeSn photodiode was finally obtained (at 0V bias) after correction of the Globar incident light spectrum. Such emission and detection open up promising perspectives for all-group-IV LEDs and PDs in applications such as gas sensing.
We present several integrated technologies on Silicon, from visible to mid-infrared, for particulate matter and gas detection. We present new concepts to detect in the visible particulate matter with a high sensitivity and a discrimination of both particle sizes and refractive indices. For gas detection, mid-infrared technologies developments include on one hand, microhotplate thermal emitters, as a cheap solution for gas sensing, eventually enhanced by plasmonics, and on the other hand quantum cascade lasers-based photoacoustic sensors, for high precision measurement, and for which the integration on Silicon is pushed forward for a reduction of costs.
KEYWORDS: Lithography, Electron beam lithography, Silicon, Point spread functions, Scanning electron microscopy, Critical dimension metrology, 3D modeling, Information technology, Etching, Monte Carlo methods
In addition to sub-20 nm technology nodes, multi-beam lithography at low-energy has also the capability to address mature CMOS technologies [130-45nm nodes] with high throughput and significant manufacturing costs reduction. It requires both “fast” resists for throughput gain and cost of ownership and “thick” resists matched with the current post-lithography processes such as etching and implant steps. We successfully demonstrated patterning of 45-130 nm nodes structures on different thick resists (up to 160 nm) with a 5 keV Mapper pre-alpha tool. In parallel, we developed a theoretical model to simulate 3D patterning showing good agreement with our experimental results.
In a period where industry strongly struggles to find a cost effective alternative solution to the 193nm double patterning
strategy, resist manufacturers actively started to design new resist platforms for the future lithography candidates such as
EUV or multi-beam. Chemically amplified resists proved their efficiency until now to reach resolution requirements and
simultaneously keeping sensitivity target. Below 20nm, edge roughness starts to play an important role on patterning
quality and critical dimension control. Simultaneously non CAR resist are showing attracting resolution progress with
reasonable sensitivity levels. In the frame of the multi-beam program IMAGINE, performances of advanced resist
platforms have been evaluated at various accelerating voltage: 5kV on the MAPPER multi-beam platform and at 100kV
on a VISTEC Gaussian tool. This paper reports on the comparison results obtained on those two types of chemistry
schemes in terms of resolution, sensitivity and roughness.
Angle resolved Mueller polarimetry implemented as polarimetric imaging of a back focal plane of a high NA microscope objective has already demonstrated a good potential for CD metrology. Here we present the experimental and numerical results indicating that this technique may also be competitive for the measurements of overlay error δ. A series of samples of superimposed gratings with well controlled overlay errors have been manufactured and measured with the angle resolved Mueller polarimeter. The overlay targets were 20-μm wide. When the overlay error is δ is equal to 0, absolute values of elements of real 4×4 Mueller matrix M are invariant by matrix transposition. Otherwise this symmetry breaks down. Consequently, we define the following overlay estimator matrix as E = |M| − |M|t. The simulations show that matrix element E14 is the most sensitive to the overlay error. The scalar estimator of E14 was calculated by averaging the pixel values over a specifically chosen mask. This estimator is found to vary linearly with δ for overlay values up to 50 nm. Our technique allows entering small overlay marks (down to 5-μm wide). Only one target measurement is needed for each overlay direction. The actual overlay value can be determined without detailed simulation of the structure provided two calibrated overlay structures are available for each direction.
Angle resolved Mueller polarimetry implemented as polarimetric imaging of the back focal plane of a high NA
microscope objective has already demonstrated a good potential for CD metrology1. In this paper we present the
experimental and numerical results which indicate that this technique may also be competitive for measurements of the
overlay error δ between two gratings at different levels. Series of samples of superimposed gratings with well controlled
overlay errors have been manufactured and measured with the angle resolved Mueller polarimeter. The overlay targets
were 20 μm wide. When overlay error δ = 0 the absolute value of Mueller matrix elements is invariant by matrix
transposition. This symmetry breaks down when δ ≠ 0. As a result, we can define the following overlay estimator matrix:
Ε = |Μ | - |Μ |t. The simulations show that matrix element E14 is the most sensitive to the overlay error. In the
experiments the scalar estimator of E14 was defined by averaging the pixel values over specifically chosen mask. The
scalar estimator is found to vary essentially linearly with δ for the overlay values up to 50 nm. Our technique allows
entering quite small overlay marks (down to 5 μm wide). The only one target measurement is needed for each overlay
direction. The actual overlay value can be determined without detailed simulation of the structure provided the two
calibrated overlay structures are available for each direction.
In the latest ITRS roadmap updated in July 2010, Maskless remains identified as one of the candidate to address lithography needs for the sub-16nm technology nodes. The attractiveness of this solution in terms of cost and flexibility linked to the throughput potential of the massively parallel writing solutions maintain the interest of large scale IC manufacturers, such as TSMC(1) and STMicroelectronics, to push the development of this technology. In July 2009, LETI and MAPPER have initiated an open collaborative program IMAGINE focused on the assessment of the MAPPER technology. This paper reports on the key results obtained during this first assessment year in terms of: resolution capabilities, stitching performances, technology reliability and infrastructure development. It also provides an extensive overview on the maturity degree and the ability of this low energy accelerating voltage multibeam option to answer to the industry needs in the 2015 horizon.
The challenge of the Integrated Circuit size reducing leads to the development of new processes for future years. In the
lithography domain, since several years, the EUV Lithography appears as a possible technique to reach the ITRS
roadmap requirements. The EUV interferometry Lithography is still nowadays an efficient way to study and improve the
EUV resist behaviors. Although the interferometer principle seems to be obvious, the optimization of its use is only
reached regarding some huge constraints. In this work accurate numerical models and experimental studies have been
developped. It shows that some undesirable effects can reduce the interference region and disturb the contrast of the
resist printed lines. The EUV light is identified as the first issue. The beam divergence of EUV light affects the contrast
quality of the fringes. The photometry computation, taking into account the optimum angular source light width is then
detailed. The second cause is the Fresnel diffraction of light due to boundaries of the grating windows. Its
superimposition with diffraction orders induces a damage of local printed interferences. This phenomenon leads to an edge disturbance of the interference fringes. The third cause addressed is the decrease of the interference area by the position of the wafer out of the focal distance. Possible shadowing effects are also shown.
E-beam Maskless activities raised a lot of interest in the past years from semiconductor
companies strongly concerned by the constant cost increase of masked-based lithography (1).
Beginning of 2008, the European Commission started an integrated program called "MAGIC",
Maskless lithography for IC manufacturing, which pushes the development and the insertion
of the European multi-beam technology (2) in the semiconductor industry. This project
supports also to develop the infrastructure for the use of this technology, including resist
processes, data processing and proximity corrections.
Within MAGIC, MAPPER develops its low energy (5keV) massively parallel concept (3).
Compared to a standard single E-Beam machine working classically at 50kV, this low
accelerating voltage requires the use of thin resist film to deal with the lower penetration
depth of the electrons. This paper presents the resist development status, including
Chemically Amplified Resist and non-CAR platforms. Comparisons of the performances of
these resist platforms in terms of resolution, sensitivity, roughness and stability are detailed,
including their potential integration into CMOS technological flow. Finally, a first review of the
state of the art of resist performance for patterning at 5kV will be performed. Based on the
level of achievements presented in this paper, a discussion is also engaged about the needs
of resist developments to fulfill industry targets in 2011.
Superconducting single photons detectors (SSPDs) have emerged in recent years as a promising alternative for
fast and sensitive infrared detectors working in the photon counting mode. In particular, those detectors combine
very low dark count rates (below 1 Hz), high speed (above 1 GHz), photon number resolution and reasonable
quantum efficiency (10% at telecom wavelengths). They already found applications in quantum cryptography
systems and integrated circuit failure analysis, but could also be used as ultimate sensors in matrix configurations.
We show here the optimization of SSPD fabrication and their optical metrology at CEA. SSPD are fabricated
by patterning a 80 nm wide nanowire in a very thin (4 nm) NbN film on sapphire, forming a pixel of several
microns size. A cryogenic all-fibered optoelectronic system has been developed and allows precise metrology of
the optical performances of SSPD. When biasing near the critical current of the nanowire, we demonstrate a
detection quantum efficiency of 8% at 1.55 µm, which is also found to be strongly polarization dependent. This
quantum efficiency being limited by optical absorption, we propose a prism coupling based absorption enhancing
structure that allows reaching 100% quantum efficiency.
EUV lithography is expected to be inserted for the 32/22 nm nodes with possible extension below.
EUV resist availability remains one of the main issues to be resolved. There is an urgent need to provide suitable tools to accelerate resist development and to achieve resolution, LER and sensitivity specifications simultaneously.
An interferometer lithography tool offers advantages regarding conventional EUV exposure tool. It allows the evaluation of resists, free from the deficiencies of optics and mask which are limiting the achieved resolution.
Traditionally, a dedicated beam line from a synchrotron, with limited access, is used as a light source in EUV interference lithography.
This paper identifies the technology locks to develop a stand alone EUV interferometer using a compact EUV source. It will describe the theoretical solutions adopted and especially look at the feasibility according to available technologies.
EUV sources available on the market have been evaluated in terms of power level, source size, spatial coherency, dose uniformity, accuracy, stability and reproducibility. According to the EUV source characteristics, several optic designs were studied (simple or double gratings). For each of these solutions, the source and collimation optic specifications have been determined.
To reduce the exposure time, a new grating technology will also be presented allowing to significantly increasing the transmission system efficiency. The optical grating designs were studied to allow multi-pitch resolution print on the same exposure without any focus adjustment.
Finally micro mechanical system supporting the gratings was studied integrating the issues due to vacuum environment, alignment capability, motion precision, automation and metrology to ensure the needed placement control between gratings and wafer. A similar study was carried out for the collimation-optics mechanical support which depends on the source characteristics.
EUV lithography is expected to be inserted for the 32 nm node and extended for the 22 nm and below. Phase shift masks (PSM) are evaluated as a possible option to push the resolution limit of the Extreme Ultra violet lithography. This paper will focus on designs and measurements of PSM implemented by etching into the Mo/Si multilayer (ML). The design and the technological developments to elaborate PSM by etching is described. Phase shift Sample (PSS) have been carried out to calibrate in "true operating conditions", i.e. through the measurement of the phase shift they produce on a reflected wavefront, at the wavelength (λ=13.5nm). The method of calibration have been investigated with a Fresnel bimirror interferometer installed on the PSI Swiss Light Source Synchrotron to measure directly the value of interest, i.e the optical phase.
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