Optoelectronic characterization of polycrystalline solar cells using time-resolved biased luminescence techniques

G. El Hajje; D. Ory; M. Paire; J.-F. Guillemoles; L. Lombez

doi:10.1117/12.2076942

16 March 2015 Optoelectronic characterization of polycrystalline solar cells using time-resolved biased luminescence techniques

G. El Hajje, D. Ory, M. Paire, J.-F. Guillemoles, L. Lombez

Author Affiliations +

Proceedings Volume 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV; 93580M (2015) https://doi.org/10.1117/12.2076942
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

This study aims to provide an innovative insight on polycrystalline solar cells characterization. Accurate and complete information on the material's performance is achieved by probing micrometric fluctuations of its charge carriers' transport properties which might influence the global device’s performance[1][2]. Results on microcrystalline Cu(In,Ga)Se2 solar cells absorbers[3] exhibited an initial fast decay followed by a slower one . Short decay lifetimes varying between 0.4 ns and 1.8 ns, were found to be linked to recombination centers, whereas longer decay lifetimes fluctuating between 3ns and 8ns, were associated with the presence of shallow emission traps. By varying the excitation wavelength from 850nm to 450nm excitation, the authors observed a hysteresis phenomenon regarding the behavior of TRPL decays as a function of the value order of the excitation wavelength. This is related to the activation of metastable defects located at the absorber/buffer interface.

Citation Download Citation

G. El Hajje, D. Ory, M. Paire, J.-F. Guillemoles, and L. Lombez "Optoelectronic characterization of polycrystalline solar cells using time-resolved biased luminescence techniques", Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580M (16 March 2015); https://doi.org/10.1117/12.2076942

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