InAsSb Strained-Layer Superlattices: A New Class Of Far Infrared Materials

S R Kurtz; L R Dawson; R M Biefeld; G C Osbourn

doi:10.1117/12.946631

15 August 1988 InAsSb Strained-Layer Superlattices: A New Class Of Far Infrared Materials

S R Kurtz, L R Dawson, R M Biefeld, G C Osbourn

Proceedings Volume 0930, Infrared Detectors and Arrays; (1988) https://doi.org/10.1117/12.946631
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

The physical properties of InAsSb strained-layer superlattices are reviewed. After a brief description of the band structure and superlattice growth and characterization, we present infrared absorption results and demonstrate the first device made from these materials, a p-n junction photodiode. From these studies, we find that these new materials can be designed to absorb out into the far infrared, well beyond the bandgap of any bulk III-V material. The prototype, non-optimized photodiode displayed a detectivity at 7 pm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.

Citation Download Citation

S R Kurtz, L R Dawson, R M Biefeld, and G C Osbourn "InAsSb Strained-Layer Superlattices: A New Class Of Far Infrared Materials", Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); https://doi.org/10.1117/12.946631

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