Theoretical analysis of R0A product in HgCdTe loophole p-n junction

Suxia Xing; Yi Cai; Benkang Chang

doi:10.1117/12.444927

19 October 2001 Theoretical analysis of R₀A product in HgCdTe loophole p-n junction

Suxia Xing, Yi Cai, Benkang Chang

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444927
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

Neglecting the effect of generation-recombination (G-R) current, tunneling current, and surface leakage current, a loophole p-n junction current and R₀A expression is developed in this paper. The R₀A characteristic varying with temperature and long-wavelength is carried out for 77- 150K temperature range. The curve indicates that the detectors are applicable at 8-10.4micrometers wavelength range for 120K and ever low temperature, but only when the temperature is below 100K, 10~14micrometers wavelength detectors can be used. These results are agree well with that of planar p-n junction's theoretical upper limit. Finally, according with the dependence of G-R current and diffusion current on temperature, the characteristic and function are set up between temperature and composition which equate the generation-recombination current to diffusion current.

Citation Download Citation

Suxia Xing, Yi Cai, and Benkang Chang "Theoretical analysis of R₀A product in HgCdTe loophole p-n junction", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444927

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