Infrared Photodiode Optimization For Higher Temperature Operation

S. R. Borrello; M. A. Kinch

doi:10.1117/12.956053

6 June 1978 Infrared Photodiode Optimization For Higher Temperature Operation

S. R. Borrello, M. A. Kinch

Proceedings Volume 0132, Utilization of Infrared Detectors; (1978) https://doi.org/10.1117/12.956053
Event: 1978 Los Angeles Technical Symposium, 1978, Los Angeles, United States

Abstract

The performance of infrared sensitive photodiodes may be improved at higher operating temperatures by a reduction of excess volume in which minority carriers are thermally gen-erated within a diffusion length of the junction. This technique requires surface recombi-nation velocities typically less than 100 cm/sec. Calculations for HgCdTe indicate a peak D* above 1.5 x 10¹¹ cm Hz½/w may be obtained at 190 K for a 5.0 µm cut-off wavelength.

Citation Download Citation

S. R. Borrello and M. A. Kinch "Infrared Photodiode Optimization For Higher Temperature Operation", Proc. SPIE 0132, Utilization of Infrared Detectors, (6 June 1978); https://doi.org/10.1117/12.956053

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