Paper
1 January 1988 Performance Of A KrF Excimer Laser Stepper
Roger W. McCleary, Paul J. Tompkins, Michael D. Dunn, Kenneth F. Walsh, John F. Conway, Ronald P. Mueller
Author Affiliations +
Abstract
Device design criteria of half micrometer linewidths have driven optical lithography to extend its imaging wavelengths into the deep ultraviolet region. Excimer lasers are the only source that produces the high spectral brightness required by projection lenses at these wavelengths. A spectral line narrowed KrF (2484 Angstrom) excimer laser and a new illuminator have been developed and integrated with current DSW Wafer Stepper® technology. The integration of these new features require the design of control subsystems to monitor and control parameters such as wavelength and temperature. Wavelength must be tuned and stabilized to optimize the resolution and distortion performance of the reduction lens. The effects of temperature and bandwidth are also important to lens performance criteria, for example astigmatism, distortion, and contrast. Acceptance results for an excimer stepper will be discussed with special emphasis on resolution capability, illumination uniformity, focus stability, and dose repeatability.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roger W. McCleary, Paul J. Tompkins, Michael D. Dunn, Kenneth F. Walsh, John F. Conway, and Ronald P. Mueller "Performance Of A KrF Excimer Laser Stepper", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968437
Lens.org Logo
CITATIONS
Cited by 9 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Distortion

Excimer lasers

Monochromatic aberrations

Excimers

Optical lithography

Lithography

Semiconducting wafers

RELATED CONTENT

The Future Of Projection Lenses And The New G Line...
Proceedings of SPIE (January 01 1988)
0.35-micron excimer DUV photolithography process
Proceedings of SPIE (August 08 1993)
Advances in deep-UV lithography
Proceedings of SPIE (June 01 1990)
New I-Line Lenses For Submicron Lithography
Proceedings of SPIE (January 01 1987)

Back to Top