0.35-micron excimer DUV photolithography process

Donald O. Arugu; Kent G. Green; Peter D. Nunan; Marcel Terbeek; Sue E. Crank; Lam Ta; Elliott Sean Capsuto; Satyendra S. Sethi

doi:10.1117/12.150433

8 August 1993 0.35-μm excimer DUV photolithography process

Donald O. Arugu, Kent G. Green, Peter D. Nunan, Marcel Terbeek, Sue E. Crank, Lam Ta, Elliott Sean Capsuto, Satyendra S. Sethi

Author Affiliations +

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150433
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

It is becoming increasingly clear that DUV excimer laser based imaging will be one of the technologies for printing sub-half micron devices. This paper reports the investigation of 0.35 micrometers photolithography process using chemically amplified DUV resists on organic anti- reflective coating (ARC). Production data from the GCA XLS excimer DUV tools with nominal gate width of 0.35 micrometers lines, 0.45 micrometers spaces was studied to demonstrate device production worthiness. This data included electrical yield information for device characterization. Exposure overlay was done by mixing and matching DUV and I-line GCA steppers for critical and non critical levels respectively. Working isolated transistors down to 0.2 micrometers have been demonstrated.

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Donald O. Arugu, Kent G. Green, Peter D. Nunan, Marcel Terbeek, Sue E. Crank, Lam Ta, Elliott Sean Capsuto, and Satyendra S. Sethi "0.35-μm excimer DUV photolithography process", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150433

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