A generalized model to predict fin-width roughness induced FinFET device variability using the boundary perturbation method

Qi Cheng; Jun You; Yijian Chen

doi:10.1117/12.2046221

28 March 2014 A generalized model to predict fin-width roughness induced FinFET device variability using the boundary perturbation method

Qi Cheng, Jun You, Yijian Chen

Author Affiliations +

Proceedings Volume 9053, Design-Process-Technology Co-optimization for Manufacturability VIII; 90530U (2014) https://doi.org/10.1117/12.2046221
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

In this paper, a generalized model to predict fin-width roughness (FWR) induced FinFET device variability is developed using the boundary perturbation method. An analytic solution to Poisson’s equation with a perturbed boundary is derived to describe the FWR effects on the sub-threshold electric potential and drain current. High model accuracy under various device operating conditions is demonstrated by a detailed comparison with TCAD simulations. The correlation among the threshold-voltage shift, dominant fin-roughness frequency, and phase difference (between two dominant fin-edge roughness functions) is identified. It is found that a periodic fluctuation of the threshold voltage can be induced by the phase difference, while more significant variations are observed at lower frequencies. Our study also shows that thinner gate oxide and wider fins will help to reduce the FWR effects.

Citation Download Citation

Qi Cheng, Jun You, and Yijian Chen "A generalized model to predict fin-width roughness induced FinFET device variability using the boundary perturbation method", Proc. SPIE 9053, Design-Process-Technology Co-optimization for Manufacturability VIII, 90530U (28 March 2014); https://doi.org/10.1117/12.2046221

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