Fast and simple modeling of non-rectangular transistors

Jen-Yi Wuu; Fedor G. Pikus; Malgorzata Marek-Sadowska

doi:10.1117/12.801541

17 October 2008 Fast and simple modeling of non-rectangular transistors

Jen-Yi Wuu, Fedor G. Pikus, Malgorzata Marek-Sadowska

Proceedings Volume 7122, Photomask Technology 2008; 71223S (2008) https://doi.org/10.1117/12.801541
Event: SPIE Photomask Technology, 2008, Monterey, California, United States

Abstract

As CMOS feature size scales down to 65nm and below, challenges for device and circuit manufacturability are emerging. As commonly seen in real designs, devices with distorted gate shapes and rough line-edges are manufactured despite the applications of aggressive resolution enhancement techniques (RET). It has been shown that such irregular gates could introduce significant extra leakage current. Existing tools and device models cannot handle non-rectangular geometries. Therefore, it is critical that a modeling flow capable of handling such irregular devices is developed and smoothly integrated into the post-lithography delay and leakage circuit analysis process. Previously proposed methods either model an irregular transistor as two different rectangular devices, one for on and the other for off state analyses; or they are difficult to be implemented. In this paper, we propose a new modeling approach that serves as a fast and simple solution to this problem and overcomes these drawbacks. We found that by adjusting both gate length and width of the equivalent device, a single equivalent rectangular device can be determined. Through TCAD and SPICE simulation experiments, we demonstrate that our model can accurately capture both on and off currents of the modeled nonrectangular gate device. The average error of our modeling approach is 1.6% for I_on and 7.5% for I_off.

Citation Download Citation

Jen-Yi Wuu, Fedor G. Pikus, and Malgorzata Marek-Sadowska "Fast and simple modeling of non-rectangular transistors", Proc. SPIE 7122, Photomask Technology 2008, 71223S (17 October 2008); https://doi.org/10.1117/12.801541

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available