EUV resist simulation based on process parameters of pattern formation reaction

Norihiko Sugie; Toshiro Itani; Takahiro Kozawa

doi:10.1117/12.2046229

17 April 2014 EUV resist simulation based on process parameters of pattern formation reaction

Norihiko Sugie, Toshiro Itani, Takahiro Kozawa

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90482G (2014) https://doi.org/10.1117/12.2046229
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

We simulated the process parameters of a pattern formation reaction that included during-the-exposure and post exposure bake (PEB) processes using an originally developed simulator. From the simulation results, the relationship between process parameters of pattern formation reaction and quencher concentration has been clarified. Moreover, we simulated the present target process parameters of extreme ultraviolet (EUV) resist for breaking the RLS trade-off. In this simulation, the process parameters were calculated from lithographic results (sensitivity, LWR, and CD) using real SEM images. This methodology was used to determine the process parameters required to break the RLS trade-off to obtain the required lithographic target of the EUV resist. We simulated the present lithography performance target using the process parameters of pattern formation reactions. These simulation results showed that a large reaction radius is necessary to break the RLS trade-off. Furthermore, we confirmed that increasing the PEB temperature leads to an improvement in the reaction radius. However, there is a discrepancy between the target radius and the controllable range of reaction radius that can be obtained by varying the PEB temperature.

Citation Download Citation

Norihiko Sugie, Toshiro Itani, and Takahiro Kozawa "EUV resist simulation based on process parameters of pattern formation reaction", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482G (17 April 2014); https://doi.org/10.1117/12.2046229

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