Study of LWR reduction and pattern collapse suppression for 16nm node EUV resists

Eishi Shiobara; Yukiko Kikuchi; Toshiro Itani

doi:10.1117/12.2011482

1 April 2013 Study of LWR reduction and pattern collapse suppression for 16nm node EUV resists

Eishi Shiobara, Yukiko Kikuchi, Toshiro Itani

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86792B (2013) https://doi.org/10.1117/12.2011482
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

EUV lithography is the most promising future technology for manufacturing devices at and below 16-nm half-pitch node. However, line width roughness (LWR) and pattern collapse are major concerns in device manufacture. In this study, the ability of surfactant rinses to reduce LWR and suppress pattern collapse was investigated. Certain surfactant rinses achieved both. We analyzed the critical dimension (CD) variation of resist patterns during surfactant rinse by highspeed atomic force microscopy (HS-AFM). No significant swelling was observed during the rinse process. We also evaluated a smoothing process subsequent to rinsing; namely, the highly controllable post-bake process. Surfactant rinse followed by post-bake process further reduced LWR.

Citation Download Citation

Eishi Shiobara, Yukiko Kikuchi, and Toshiro Itani "Study of LWR reduction and pattern collapse suppression for 16nm node EUV resists", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792B (1 April 2013); https://doi.org/10.1117/12.2011482

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