Paper
17 April 2014 Aerial image of mesh supported extreme ultraviolet pellicle
Author Affiliations +
Abstract
We report the effect of the mesh support for the EUV pellicle on the wafer pattern image. The intensity distribution passing through the meshed pellicle was simulated with a partially coherent EUV beam showing that its non-uniformity and the CD uniformity are increased with the mesh width. In order to reduce a non-uniformity of the intensity distribution and CD uniformity, the mesh width should be narrower and the height becomes smaller as well. Thus, the image deformation on the wafer due to the mesh can be avoided by optimizing the mesh structure and thus the pellicle with the mesh support can be used for the EUV lithography.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ki-ho Ko, Guk-Jin Kim, Michael Yeung, Eytan Barouch, Mun-Ja Kim, Seung-Sue Kim, and Hye-Keun Oh "Aerial image of mesh supported extreme ultraviolet pellicle", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482D (17 April 2014); https://doi.org/10.1117/12.2046202
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Pellicles

Extreme ultraviolet

Semiconducting wafers

Photomasks

Extreme ultraviolet lithography

Silicon

Thin films

RELATED CONTENT

Effect of defects on extreme ultraviolet pellicle
Proceedings of SPIE (March 18 2014)
Innovating from History
Proceedings of SPIE (January 21 2019)
Vote taking for EUV lithography a radical approach to...
Proceedings of SPIE (March 24 2017)
Fabrication of a full size EUV pellicle based on silicon...
Proceedings of SPIE (October 23 2015)
Is extreme ultraviolet pellicle possible? in terms of...
Proceedings of SPIE (March 23 2012)
Evaluation of shadowing and flare effect for EUV tool
Proceedings of SPIE (March 19 2009)

Back to Top