SEMATECH's cycles of learning test for EUV photoresist and its applications for process improvement

Jun Sung Chun; Shih-Hui Jen; Karen Petrillo; Cecilia Montgomery; Dominic Ashworth; Mark Neisser; Takashi Saito; Lior Huli; David Hetzer

doi:10.1117/12.2045905

17 April 2014 SEMATECH's cycles of learning test for EUV photoresist and its applications for process improvement

Jun Sung Chun, Shih-Hui Jen, Karen Petrillo, Cecilia Montgomery, Dominic Ashworth, Mark Neisser, Takashi Saito, Lior Huli, David Hetzer

Author Affiliations +

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90481Z (2014) https://doi.org/10.1117/12.2045905
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

With current progress in exposure source power, novel resist materials, and post processing techniques, EUV is getting closer to the production environment. As reported continuously, SEMATECH established cycles of learning program. The data generated from the program has been utilized to measure current state of the art of EUV photoresist for production or pilot line use. Thanks to SEMATECH core and associate members’ attention to the project, numerous EUV samples have been tested and they were based on the best performing EUV resists from associate members. This year we completed the evaluations for under-layers, lines and spaces, and contact holes. We also applied track based techniques to drive both low line edge roughness control and enlarge the process window with techniques such as FIRM^TM and track based smoothing process. In this paper we will discuss about the results from cycles of learning test and show post-processing results of the three best line and space resists when combined with different FIRM^TM materials.

Citation Download Citation

Jun Sung Chun, Shih-Hui Jen, Karen Petrillo, Cecilia Montgomery, Dominic Ashworth, Mark Neisser, Takashi Saito, Lior Huli, and David Hetzer "SEMATECH's cycles of learning test for EUV photoresist and its applications for process improvement", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481Z (17 April 2014); https://doi.org/10.1117/12.2045905

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available