Paper
19 September 2013 850nm vertical cavity surface emitting lasers utilizing the self-planar mesa structure
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Proceedings Volume 8905, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications; 89050E (2013) https://doi.org/10.1117/12.2032237
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
We presented the self-planar mesa structure for improving the performances of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs). Thermal simulation results demonstrated that the enhanced lateral heat dissipation and decreased series resistance within VCSELs could be gained using the self-planar mesa structure. By employing the selfplanar mesa, the maximum output power was increased from 8mW to more than 11mW, and the maximum wall-plug efficiency was improved from 26% to 36% for the VCSEL with an oxide aperture size of 13 μm at 15°C.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianwei Zhang, Yongqiang Ning, Xing Zhang, Jian Zhang, and Lijun Wang "850nm vertical cavity surface emitting lasers utilizing the self-planar mesa structure", Proc. SPIE 8905, International Symposium on Photoelectronic Detection and Imaging 2013: Laser Sensing and Imaging and Applications, 89050E (19 September 2013); https://doi.org/10.1117/12.2032237
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KEYWORDS
Vertical cavity surface emitting lasers

Oxides

Resistance

Heat flux

Internal quantum efficiency

Temperature metrology

Thermal effects

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