Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180deg C

N. Ledentsov; L. Chorchos; O. Makarov; J.-R. Kropp; V. A. Shchukin; V. P. Kalosha; J. P. Turkiewicz; N. Cherkashin; N. N. Ledentsov

doi:10.1117/12.2543244

24 February 2020 Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180°C

N. Ledentsov, L. Chorchos, O. Makarov, J.-R. Kropp, V. A. Shchukin, V. P. Kalosha, J. P. Turkiewicz, N. Cherkashin, N. N. Ledentsov

Author Affiliations +

Proceedings Volume 11300, Vertical-Cavity Surface-Emitting Lasers XXIV; 113000H (2020) https://doi.org/10.1117/12.2543244
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

New applications in sensing, automotive and on-board applications require vertical-cavity surface-emitting lasers (VCSELs) operating at high data rates up to very high ambient temperatures. We study temperature stability of the 850 nm Quantum-Dot (QD) VCSELs and benchmark them to Quantum-Well (QW) VCSELs of similar design.

QD VCSELs enable extension of the temperature stability and demonstrate threshold currents below 1 mA for operation range from 30°C to 200°C. The role of gain to cavity detuning is discussed in details. 25 Gbit/s NRZ multi-mode fiber transmission with QD VCSELs is realized at temperatures up to 180°C. Pulsed operation of QD VCSELs with 8 μm oxide aperture diameter is studied at temperatures from 30°C to 125°C and 1 W peak power is realized on 100 ns pulses at room temperature.

Conference Presentation

Citation Download Citation

N. Ledentsov, L. Chorchos, O. Makarov, J.-R. Kropp, V. A. Shchukin, V. P. Kalosha, J. P. Turkiewicz, N. Cherkashin, and N. N. Ledentsov "Quantum-dot oxide-confined 850-nm VCSELs with extreme temperature stability operating at 25 Gbit/s up to 180°C", Proc. SPIE 11300, Vertical-Cavity Surface-Emitting Lasers XXIV, 113000H (24 February 2020); https://doi.org/10.1117/12.2543244

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