Paper
26 September 2013 Intrinsic normal Zeeman effect for spin plasmons in semiconductor quantum wells
C. A. Ullrich, I. D'Amico, F. Baboux, F. Perez
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Abstract
The normal Zeeman effect gives rise to a three-fold splitting of atomic spectral lines in the presence of strong external magnetic fields. In n-doped semiconductor quantum wells, a similar three-fold splitting occurs in the intersubband spin plasmon resonance, as was recently demonstrated experimentally using inelastic light scattering. The plasmon splitting is caused by the interplay of intrinsic spin-orbit crystal magnetic fields and dynamical many-body effects. We show that it can be regarded as an intrinsic normal Zeeman effect in quantum wells. We present a formal framework for calculating the quantum well electronic states and their collective linear response in the presence of Rashba and Dresselhaus spin-orbit coupling, and we show how the intrinsic normal Zeeman effect of the spin plasmons can be controlled by external magnetic fields.
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C. A. Ullrich, I. D'Amico, F. Baboux, and F. Perez "Intrinsic normal Zeeman effect for spin plasmons in semiconductor quantum wells", Proc. SPIE 8813, Spintronics VI, 88132W (26 September 2013); https://doi.org/10.1117/12.2025458
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Cited by 3 scholarly publications.
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KEYWORDS
Magnetism

Plasmons

Quantum wells

Zeeman effect

Crystals

Semiconductors

Surface plasmons

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