Magnetic studies of persistent photoconductivity in compensated PbTe:Ga

A. N. Vasil'ev; T. N. Voloshok; S. V. Kuvshinnikov

doi:10.1117/12.237121

26 April 1996 Magnetic studies of persistent photoconductivity in compensated PbTe:Ga

A. N. Vasil'ev, T. N. Voloshok, S. V. Kuvshinnikov

Proceedings Volume 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials; (1996) https://doi.org/10.1117/12.237121
Event: 3rd International Conference on Intelligent Materials, 1996, Lyon, France

Abstract

The solid state memory effect, known as persistent photoconductivity is described in terms of electronic configurations of impurity centers in narrow-gap semiconductors. The studies of resistivity and magnetic susceptibility of compensated bulk single crystal PbTe:Ga present strong evidence that the dopant centers produce two types of electronic states: a shallow and delocalized paramagnetic level associated with the normal substitutional site configuration and a more localized non-magnetic level arising from a lattice distortion at or near the donor. The metastable properties of the impurity centers suggest a redistribution of electrons, 2Ga⁰ Ga⁺ + Ga^-, where, rather than all donors being neutral, half the Ga atoms have two electrons and become negatively charged whereas the other half have none and are positively charged. The potential areas of application of these intelligent materials are discussed.

Citation Download Citation

A. N. Vasil'ev, T. N. Voloshok, and S. V. Kuvshinnikov "Magnetic studies of persistent photoconductivity in compensated PbTe:Ga", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); https://doi.org/10.1117/12.237121

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