Properties of RLSA microwave surface wave plasma and its applications to finFET fabrication

Lee Chen; Qingyun Yang

doi:10.1117/12.2014367

29 March 2013 Properties of RLSA microwave surface wave plasma and its applications to finFET fabrication

Lee Chen, Qingyun Yang

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 86850H (2013) https://doi.org/10.1117/12.2014367
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

A new type of plasma source (RLSA^TM) is described to generate low temperature plasma in the wafer region. The low T_e characteristic arises from decoupling of wafer region palsma from the power deposition region. This new plasma source has been demonstrated to show improved performance in etching high aspect ratio structures with reduced micro-loading and ARDE and can help mitigate challenges in advanced finFET FEOL etch applications.

Citation Download Citation

Lee Chen and Qingyun Yang "Properties of RLSA microwave surface wave plasma and its applications to finFET fabrication", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850H (29 March 2013); https://doi.org/10.1117/12.2014367

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