Understanding device impact of line edge/width roughness in frequency domain

Peng Xie; He Ren; Aneesh Nainani; Huixiong Dai; Chris Bencher; Chris Ngai

doi:10.1117/12.2013495

29 March 2013 Understanding device impact of line edge/width roughness in frequency domain

Peng Xie, He Ren, Aneesh Nainani, Huixiong Dai, Chris Bencher, Chris Ngai

Proceedings Volume 8684, Design for Manufacturability through Design-Process Integration VII; 86840J (2013) https://doi.org/10.1117/12.2013495
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Lithography pattern line-edge roughness (LER) has important device implications such as device variability, current leakage and dielectric breakdown. This study characterizes how LER impacts device performance in terms of spatial frequency distribution. In the front-end of device fabrication, it is shown that low-frequency fin LER causes large FinFET device variability and becomes more severe for advanced device nodes. The effect of the dielectric/metal line LER spatial frequency distribution on the dielectric breakdown and resistance-capacitance (RC) variation for interconnects was studied. It is found that low-frequency LER introduces the highest electrostatic field due to surface charge localization, resulting in an increase in the occurrence of a dielectric breakdown path. The critical frequency range that contributes the most to device variability also evolves with device nodes. On the other hand, RC variation shows negligible dependency on LER amplitude and frequency.

Citation Download Citation

Peng Xie, He Ren, Aneesh Nainani, Huixiong Dai, Chris Bencher, and Chris Ngai "Understanding device impact of line edge/width roughness in frequency domain", Proc. SPIE 8684, Design for Manufacturability through Design-Process Integration VII, 86840J (29 March 2013); https://doi.org/10.1117/12.2013495

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