Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio

Jens Timo Neumann; Paul Gräupner; Winfried Kaiser; Reiner Garreis; Bernd Geh

doi:10.1117/12.2011455

1 April 2013 Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio

Jens Timo Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, Bernd Geh

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 867915 (2013) https://doi.org/10.1117/12.2011455
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

With higher NA (≫ 0.33) and increased chief-ray-angles, mask effects will significantly impact the overall scanner performance. We discuss these effects in detail, paying particular attention to the multilayer-absorber interaction, and show that there is a trade-off between image quality and reticle efficiency. We show that these mask effects for high NA can be solved by employing a reduction ratio <4X, and show several options for a high-NA optics. Carefully discussing the feasibility of these options is an important part of defining a high-NA EUV tool.

Citation Download Citation

Jens Timo Neumann, Paul Gräupner, Winfried Kaiser, Reiner Garreis, and Bernd Geh "Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867915 (1 April 2013); https://doi.org/10.1117/12.2011455

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