The source of holes in p-type InxGa1-xN films

M. E. Zvanut; W. R. Willoughby; D. D. Koleske

doi:10.1117/12.2002569

27 March 2013 The source of holes in p-type In_xGa_1-xN films

M. E. Zvanut, W. R. Willoughby, D. D. Koleske

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 86250D (2013) https://doi.org/10.1117/12.2002569
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Mg-doped In_xGa_1-xN films are investigated using electron paramagnetic resonance (EPR) spectroscopy. Surprisingly, the number of EPR-detected Mg-related acceptors decreases as x increases from 0.021 to 0.112, but the hole density increases as expected. The observation is attributed to the loss of a magnetic resonance signal from Mg impurities in the vicinity of an In-induced perturbing field. Analysis shows that the number of Mg affected is greater than the amount predicted by considering only next nearest neighbors, but does not extend to all the Mg atoms. The results support the model in which In-induced potential fluctuations perturb the Mg dopant.

Citation Download Citation

M. E. Zvanut, W. R. Willoughby, and D. D. Koleske "The source of holes in p-type In_xGa_1-xN films", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250D (27 March 2013); https://doi.org/10.1117/12.2002569

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