Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates

Hitoshi Ohsato; Manijeh Razeghi

doi:10.1117/12.271199

15 April 1997 Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates

Hitoshi Ohsato, Manijeh Razeghi

Author Affiliations +

Proceedings Volume 2999, Photodetectors: Materials and Devices II; (1997) https://doi.org/10.1117/12.271199
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We have been presented crystallographic growth models of GaN thin films on the (alpha) -Al₂O₃ substrates based on the crystal chemistry: electronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the same aspects of epitaxial growth.

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Hitoshi Ohsato and Manijeh Razeghi "Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates", Proc. SPIE 2999, Photodetectors: Materials and Devices II, (15 April 1997); https://doi.org/10.1117/12.271199

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