Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)

Elmar Platzgummer; Christof Klein; Hans Loeschner

doi:10.1117/12.964988

8 November 2012 Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)

Elmar Platzgummer, Christof Klein, Hans Loeschner

Proceedings Volume 8522, Photomask Technology 2012; 85221H (2012) https://doi.org/10.1117/12.964988
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

Printing results as achieved with a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC) within 1cm² specification write fields on 6” mask blanks are reported. The eMET POC consists of a column with 200x reduction optics. Inserted into the column is a CMOS addressable (max. 12.8 Gbits/s) blanking device, providing 256k (k=1024) programmable beams within 82μm x 82μm beam array fields. Multi-beam exposures are done on 150mm Si monitor wafers and 6” mask blanks moved at constant speed (up to 1.23 mm/s) with a high precision (1nm 1sigma) laser-interferometer controlled stage in stripes of 82 μm width (2μm overlap between adjacent stripes). Detailed evaluation results with respect to resolution, CDU, linearity, distortion control and stability, as well as OPC and ILT exposure capabilities are presented. Exposures on 0.1nm address grid are demonstrated.

Citation Download Citation

Elmar Platzgummer, Christof Klein, and Hans Loeschner "Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)", Proc. SPIE 8522, Photomask Technology 2012, 85221H (8 November 2012); https://doi.org/10.1117/12.964988

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