Paper
15 October 2012 The effectiveness of metal oxide nanocrystal-enhanced polymers as hardmasks for photolithography
Mary Ann Hockey, Qin Lin, Eric Calderas
Author Affiliations +
Abstract
Utilizing thin photoresist imaging layers for successful pattern transfer has gained acceptance as a lithography process of record, primarily due to the incorporation of silicon-containing hardmask (HM) layers for added etching resistance. Our work includes understanding the impact of incorporating metal oxide (HfO2, ZrO2, ZnO, and TiZrO2) nanocrystal additives supplied by Pixelligent Technologies into polymer-based spin-on HM coatings. The goal was to quantify etch selectivity and analyze lithography process latitudes with the addition of nanocrystals into polymers. Results indicate such additions provide substantial process window advantages with improvements in the depth of focus (DOF) and overall pattern collapse margins.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mary Ann Hockey, Qin Lin, and Eric Calderas "The effectiveness of metal oxide nanocrystal-enhanced polymers as hardmasks for photolithography", Proc. SPIE 8456, Nanophotonic Materials IX, 84560Q (15 October 2012); https://doi.org/10.1117/12.928964
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KEYWORDS
Etching

Nanoparticles

Polymers

Nanocomposites

Metals

Nanocrystals

Oxides

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