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Utilizing thin photoresist imaging layers for successful pattern transfer has gained acceptance as a lithography process
of record, primarily due to the incorporation of silicon-containing hardmask (HM) layers for added etching resistance.
Our work includes understanding the impact of incorporating metal oxide (HfO2, ZrO2, ZnO, and TiZrO2) nanocrystal
additives supplied by Pixelligent Technologies into polymer-based spin-on HM coatings. The goal was to quantify
etch selectivity and analyze lithography process latitudes with the addition of nanocrystals into polymers. Results
indicate such additions provide substantial process window advantages with improvements in the depth of focus
(DOF) and overall pattern collapse margins.
Mary Ann Hockey,Qin Lin, andEric Calderas
"The effectiveness of metal oxide nanocrystal-enhanced polymers as hardmasks for photolithography", Proc. SPIE 8456, Nanophotonic Materials IX, 84560Q (15 October 2012); https://doi.org/10.1117/12.928964
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Mary Ann Hockey, Qin Lin, Eric Calderas, "The effectiveness of metal oxide nanocrystal-enhanced polymers as hardmasks for photolithography," Proc. SPIE 8456, Nanophotonic Materials IX, 84560Q (15 October 2012); https://doi.org/10.1117/12.928964