Fundamental characterization of silicon-containing spin-on hardmask for 193nm photolithography

Vishal Sipani; Yoshi Hishiro; Mirzafer Abatchev

doi:10.1117/12.659102

11 April 2006 Fundamental characterization of silicon-containing spin-on hardmask for 193nm photolithography

Vishal Sipani, Yoshi Hishiro, Mirzafer Abatchev

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532U (2006) https://doi.org/10.1117/12.659102
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

In this contribution, we have performed the fundamental characterization of silicon-containing spin-on hardmasks. There has been an interest in using these materials as part of multi-layer resist (MLR) technology to replace CVD films in order to improve lithographic performance and lower the overall process cost. However, not much is known about the characteristics of these materials in terms of their resist compatibility and etch performance, based on their composition. We have characterized these materials using a number of analytical techniques, including: FTIR, XPS, etc. We have also studied the effect of numerous etching chemistries, such as CF₄ and SO₂/O₂, to determine their etch characteristics. Finally, we provide some after-dry-develop etch profiles.

Citation Download Citation

Vishal Sipani, Yoshi Hishiro, and Mirzafer Abatchev "Fundamental characterization of silicon-containing spin-on hardmask for 193nm photolithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532U (11 April 2006); https://doi.org/10.1117/12.659102

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