Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application

Wei-Su Chen; Peng-Sheng Chen; Hung-Wen Wei; Frederick T. Chen; Ming-Jinn Tsai; Tzu-Kun Ku

doi:10.1117/12.915474

20 March 2012 Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application

Wei-Su Chen, Peng-Sheng Chen, Hung-Wen Wei, Frederick T. Chen, Ming-Jinn Tsai, Tzu-Kun Ku

Proceedings Volume 8325, Advances in Resist Materials and Processing Technology XXIX; 83250V (2012) https://doi.org/10.1117/12.915474
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

High AR bi-layer resist (BLR) pillar with organic underlayer (UL) is inevitable for etching of thick RRAM film stacking considering etch selectivity to avoid collapse. Selection of UL is a key factor to determine the AR of BLR pillar and selectivity during etching of hard mask (HM) and RRAM film stacking. In this work, e-beam patterning of HSQ pillar under various e-beam dose conditions, pattern density and HSQ thicknesses are studied on carbon highly contained UL TBLC-100PM. Hard mask layer of low temperature nitride (LTN) or oxide (LTO) above TiN/Ti/HfOx RRAM film stacking are also studied for achieving highest HSQ CD resolution by reducing e-beam proximity effect. Fogging effect is studied with various e-beam dose of the L/S=1/20 isolated pillar array which is far from the other arrays of 36 μm. Experimental results are summarized below. Etch rates (etch resistance) of TBLC-100PM UL under fluorine or chlorine-based plasmas are lower (higher) than that of AR3-600 UL with low carbon contained. Thicker LTN HM is necessary for higher HSQ pillar CD resolution. HSQ pillar CD resolution on LTO HM is higher than that on LTN HM. Smallest CD of HSQ pillar is 23.1 nm. Fogging effect is strong for TBLC-100PM where e-beam dose could affect the shape of HSQ pillar of neighboring array. This is not observed for AR3-600 UL. HSQ pillar CD resolution is highest for HSQ coated at 2000 rpm. Small change of HSQ coating speed could degrade CD resolution and imaging contrast drastically which may come from the fogging effect.

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Wei-Su Chen, Peng-Sheng Chen, Hung-Wen Wei, Frederick T. Chen, Ming-Jinn Tsai, and Tzu-Kun Ku "Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application", Proc. SPIE 8325, Advances in Resist Materials and Processing Technology XXIX, 83250V (20 March 2012); https://doi.org/10.1117/12.915474

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KEYWORDS

Etching

Cadmium

Image resolution

Electron beam lithography

Plasmas

Photomasks

Carbon

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