Ultimate lithographic performances of advanced resists CAR or non-CAR resist?

Jan Frederik Van Steenbergen; Noboru Ootsuka; Xavier Buch; Béatrice Icard; Claire Sourd; Christophe Constancias; Bernard Dalzotto; Laurent Pain

doi:10.1117/12.916624

21 March 2012 Ultimate lithographic performances of advanced resists CAR or non-CAR resist?

Jan Frederik Van Steenbergen, Noboru Ootsuka, Xavier Buch, Béatrice Icard, Claire Sourd, Christophe Constancias, Bernard Dalzotto, Laurent Pain

Author Affiliations +

Proceedings Volume 8323, Alternative Lithographic Technologies IV; 83232M (2012) https://doi.org/10.1117/12.916624
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

In a period where industry strongly struggles to find a cost effective alternative solution to the 193nm double patterning strategy, resist manufacturers actively started to design new resist platforms for the future lithography candidates such as EUV or multi-beam. Chemically amplified resists proved their efficiency until now to reach resolution requirements and simultaneously keeping sensitivity target. Below 20nm, edge roughness starts to play an important role on patterning quality and critical dimension control. Simultaneously non CAR resist are showing attracting resolution progress with reasonable sensitivity levels. In the frame of the multi-beam program IMAGINE, performances of advanced resist platforms have been evaluated at various accelerating voltage: 5kV on the MAPPER multi-beam platform and at 100kV on a VISTEC Gaussian tool. This paper reports on the comparison results obtained on those two types of chemistry schemes in terms of resolution, sensitivity and roughness.

Citation Download Citation

Jan Frederik Van Steenbergen, Noboru Ootsuka, Xavier Buch, Béatrice Icard, Claire Sourd, Christophe Constancias, Bernard Dalzotto, and Laurent Pain "Ultimate lithographic performances of advanced resists CAR or non-CAR resist?", Proc. SPIE 8323, Alternative Lithographic Technologies IV, 83232M (21 March 2012); https://doi.org/10.1117/12.916624

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