Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images

Takahiro Kozawa; Hiroaki Oizumi; Toshiro Itani; Seiichi Tagawa

doi:10.1117/12.879331

15 April 2011 Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Author Affiliations +

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79720U (2011) https://doi.org/10.1117/12.879331
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

The chemical reactions induced in chemically amplified resists using a molecular glass resist (the seventh Selete Standard Resist, SSR7) were investigated. Two-dimensional (half-pitch and exposure dose) matrices of resist line width and line edge roughness (LER) and the remaining resist thickness were analyzed on the basis of the sensitization mechanisms of chemically amplified resists for extreme ultraviolet (EUV) lithography. The line width, LER, and remaining resist thickness were successfully reproduced by assuming that LER is inversely proportional to the chemical gradient. The chemistry of SSR7 was discussed.

Citation Download Citation

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, and Seiichi Tagawa "Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720U (15 April 2011); https://doi.org/10.1117/12.879331

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