Current spreading effect in vertical GaN/InGaN LEDs

Chi-Kang Li; Yuh-Renn Wu

doi:10.1117/12.877663

3 March 2011 Current spreading effect in vertical GaN/InGaN LEDs

Chi-Kang Li, Yuh-Renn Wu

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 79392K (2011) https://doi.org/10.1117/12.877663
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In this paper, we have analyzed and discussed the current spreading effect of the vertical LED depending on different electrode patterns. A fully 2D model by solving drift-diffusion and Poisson equations is used to investigate the current flow paths and radiative recombination region. The conventional vertical LED with and without the transparent conducting layer has been considered to figure out the physical mechanism of the device. With the examination of the separated electrode patterns, we find that the hole current spreading length is the critical factor to influence the lighting region due to its relatively low mobility. The effect of the spacing and geometry of the electrode pattern has been studied in this paper. We will present our work on modeling the different geometric LED device and study the optimized condition for these chips.

Citation Download Citation

Chi-Kang Li and Yuh-Renn Wu "Current spreading effect in vertical GaN/InGaN LEDs", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79392K (3 March 2011); https://doi.org/10.1117/12.877663

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