InGaN based high efficiency LED

Eun-Hyun Park; Soo-Kun Jeon; Chang-Tae Kim; Dong-Hwan Kim; Jung-Seo Park

doi:10.1117/12.741754

14 September 2007 InGaN based high efficiency LED

Eun-Hyun Park, Soo-Kun Jeon, Chang-Tae Kim, Dong-Hwan Kim, Jung-Seo Park

Proceedings Volume 6669, Seventh International Conference on Solid State Lighting; 66690J (2007) https://doi.org/10.1117/12.741754
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

Key points for high efficiency LED are reviewed as internal and external structure. Then, the effect of silicon doping in the selected barrier on the electroluminescence of InGaN/GaN MQW-LED is explained with specially designed dual wavelength LEDs. The result verifies that the hole carrier transport is easily blocked by the silicon doped barrier, and the dominant electron and hole recombination occurs at the wells between p-GaN and the silicon doped barrier.

Citation Download Citation

Eun-Hyun Park, Soo-Kun Jeon, Chang-Tae Kim, Dong-Hwan Kim, and Jung-Seo Park "InGaN based high efficiency LED", Proc. SPIE 6669, Seventh International Conference on Solid State Lighting, 66690J (14 September 2007); https://doi.org/10.1117/12.741754

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