Tailoring the wavelength of semiconductor disk lasers

Oleg G. Okhotnikov

doi:10.1117/12.873167

21 February 2011 Tailoring the wavelength of semiconductor disk lasers

Oleg G. Okhotnikov

Proceedings Volume 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs); 79190U (2011) https://doi.org/10.1117/12.873167
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Optically-pumped semiconductor disk lasers (SDLs) represent a proven approach for generation of multi-watt output powers with excellent beam quality [1-6]. They combine many advantages of solid-state lasers with the added benefit of wavelength tailoring provided by the semiconductor gain material. During the past few years a wafer fusion technique has been used extensively in the producing of vertical-cavity surface-emitting lasers operating at the telecom wavelengths of 1.3 - 1.55 μm. This technique allows the integration of non-lattice-matched semiconductor materials, e.g. GaAs and InP, which cannot be grown monolithically. Here we describe the first wafer fused SDLs operating at the wavelength of 1.3 and 1.57 μm in both continuous-wave and mode-locked regimes. The quantum dot semiconductors provide an interesting alternative to quantum-well (QW) structures since these materials alleviate the requirement for lattice matching. Recently, we have demonstrated first quantum dot based gain medium in SDL architecture. Since then, different wavelengths have been demonstrated both in continuous-wave and mode-locked regimes with a performance comparable to quantum-well-based lasers. The (AlGaIn)(AsSb) material system establishes a steady platform for optoelectronic devices operating in the mid-infrared spectral range. Latticematched or strain-compensated structures employing InGaAsSb as an active material and AlGaAsSb for barrier and cladding layers grown on GaSb substrates are demonstrated to be compounds of choice for long-wavelength lasers and photodetectors. In this study we report an optically-pumped semiconductor disk laser emitting radiation around 2.5 μm tunable over 130 nm. To our knowledge, this is the widest spectral range reported to date at this wavelength.

Citation Download Citation

Oleg G. Okhotnikov "Tailoring the wavelength of semiconductor disk lasers", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 79190U (21 February 2011); https://doi.org/10.1117/12.873167

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available