Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers

T. Leinonen; V.-M. Korpijärvi; A. Härkönen; M. Guina

doi:10.1117/12.906204

14 February 2012 Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers

T. Leinonen, V.-M. Korpijärvi, A. Härkönen, M. Guina

Proceedings Volume 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II; 824208 (2012) https://doi.org/10.1117/12.906204
Event: SPIE LASE, 2012, San Francisco, California, United States

Abstract

We review recent results concerning the development of dilute nitride based semiconductor disk lasers. We have demonstrated over 7.4 W of output power at the second harmonic wavelength (around 590 nm) using a β-BBO crystal. Over 10 W has been demonstrated at ~1.2 μm, and multi-watt output power has been achieved at 589 nm with narrow linewidth (δν < 20 MHz).

Citation Download Citation

T. Leinonen, V.-M. Korpijärvi, A. Härkönen, and M. Guina "Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers", Proc. SPIE 8242, Vertical External Cavity Surface Emitting Lasers (VECSELs) II, 824208 (14 February 2012); https://doi.org/10.1117/12.906204

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