eMET: development of a 50 keV electron projection multibeam mask exposure tool for the 16nm hp technology node and below

Elmar Platzgummer; Stefan Cernusca; Christof Klein; Samuel Kvasnica; Bernd Sonalkar; Hans Loeschner

doi:10.1117/12.866350

26 May 2010 eMET: development of a 50 keV electron projection multibeam mask exposure tool for the 16nm hp technology node and below

Elmar Platzgummer, Stefan Cernusca, Christof Klein, Samuel Kvasnica, Bernd Sonalkar, Hans Loeschner

Author Affiliations +

Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 77480H (2010) https://doi.org/10.1117/12.866350
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

In 2009 substantial experience was obtained with projection electron and ion multi-beam test systems providing 43-thousand programmable beams of 12.5 nm beam size. Grey scale and redundancy exposure was demonstrated with 20 nm hp resolution. The results were in excellent agreement with design and expectations. Based on this experience, an electron-optical column for an electron Mask Exposure Tool (eMET) has been designed for the 16 nm hp technology node and below. An advanced Aperture Plate System (APS) is being developed for eMET providing ca. 256-thousand programmable 50 keV e-beams of 20nm and 10nm beam size. The development starts with the realization of a proof-of-concept system (eMET POC) for which a low cost but very precise vacuum stage will be made available. The potential eMET writing speed as governed by APS and data path speed is > 40 cm²/h when writing with 20nm-sized beams on a 10 nm grid, and > 10 cm²/h when writing with 10nm-sized beams on a 5 nm grid.

Citation Download Citation

Elmar Platzgummer, Stefan Cernusca, Christof Klein, Samuel Kvasnica, Bernd Sonalkar, and Hans Loeschner "eMET: development of a 50 keV electron projection multibeam mask exposure tool for the 16nm hp technology node and below", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77480H (26 May 2010); https://doi.org/10.1117/12.866350

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