Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write

Elmar Platzgummer; Christof Klein; Peter Joechl; Hans Loeschner; Martin Witt; Wolfgang Pilz; Joerg Butschke; Michael Jurisch; Florian Letzkus; Holger Sailer; Mathias Irmscher

doi:10.1117/12.832156

23 September 2009 Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write

Elmar Platzgummer, Christof Klein, Peter Joechl, Hans Loeschner, Martin Witt, Wolfgang Pilz, Joerg Butschke, Michael Jurisch, Florian Letzkus, Holger Sailer, Mathias Irmscher

Author Affiliations +

Proceedings Volume 7488, Photomask Technology 2009; 74881D (2009) https://doi.org/10.1117/12.832156
Event: SPIE Photomask Technology, 2009, Monterey, California, United States

Abstract

A detailed evaluation study has been performed with respect to the suitability of projection electron and ion multi-beam lithography for the fabrication of leading-edge complex masks. The study includes recent results as obtained with electron and ion multi-beam proof-of-concept systems with 200x reduction projection optics where patterns are generated on substrates using a programmable aperture plate system (APS) with integrated CMOS electronics, generating several thousands of well defined beams in parallel. A comparison of electron and ion projection multi-beam writing is provided, in particular with respect to the suitability to expose non-chemically amplified resist (non-CAR) materials. The extendibility of projection multi-beam technologies for 16nm hp, 11nm hp and 8nm hp mask nodes is discussed as well as for wafer direct write for 22nm hp and below.

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Elmar Platzgummer, Christof Klein, Peter Joechl, Hans Loeschner, Martin Witt, Wolfgang Pilz, Joerg Butschke, Michael Jurisch, Florian Letzkus, Holger Sailer, and Mathias Irmscher "Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write", Proc. SPIE 7488, Photomask Technology 2009, 74881D (23 September 2009); https://doi.org/10.1117/12.832156

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