Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

Daniel R. Schuette; Richard C. Westhoff; Andrew H. Loomis; Douglas J. Young; Joseph S. Ciampi; Brian F. Aull; Robert K. Reich

doi:10.1117/12.849356

28 April 2010 Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

Daniel R. Schuette, Richard C. Westhoff, Andrew H. Loomis, Douglas J. Young, Joseph S. Ciampi, Brian F. Aull, Robert K. Reich

Author Affiliations +

Proceedings Volume 7681, Advanced Photon Counting Techniques IV; 76810P (2010) https://doi.org/10.1117/12.849356
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to a transparent support substrate followed by indium bump bonding of this layer to a signal-processing ROIC. This hybrid detector approach can be used to fabricate imagers with high-fill-factor pixels and enhanced quantum efficiency in the near infrared as well as large-pixel-count, small-pixel-pitch arrays with pixel-level signal processing. In addition, the oxide bonding is compatible with high-temperature processing steps that can be used to lower dark current and improve optical response in the ultraviolet.

Citation Download Citation

Daniel R. Schuette, Richard C. Westhoff, Andrew H. Loomis, Douglas J. Young, Joseph S. Ciampi, Brian F. Aull, and Robert K. Reich "Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays", Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810P (28 April 2010); https://doi.org/10.1117/12.849356

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