Ultrafast silicon-plasmonic modulators

S. Sederberg; Z. Han; V. Vien; A. Y. Elezzabi

doi:10.1117/12.842023

1 March 2010 Ultrafast silicon-plasmonic modulators

S. Sederberg, Z. Han, V. Vien, A. Y. Elezzabi

Proceedings Volume 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV; 760013 (2010) https://doi.org/10.1117/12.842023
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

Several silicon-based plasmonic waveguides are proposed for long propagation and ultrafast all-optical modulation and switching applications. Above-bandgap femtosecond pump pulses are used to generate free carriers in ion-implanted silicon, resulting in ultrafast nonlinear phase and amplitude modulation. It is demonstrated that by carefully designing a 5-layer device from silver, ion-implanted silicon and air, it is possible to achieve long propagation distances (~100μm), or switching times of 5ps and an on-off contrast of 35dB.

Citation Download Citation

S. Sederberg, Z. Han, V. Vien, and A. Y. Elezzabi "Ultrafast silicon-plasmonic modulators", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 760013 (1 March 2010); https://doi.org/10.1117/12.842023

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