Presentation + Paper
8 March 2024 CMOS-compatible MIS–Schottky heterojunctions for plasmonic waveguide modulation
Author Affiliations +
Proceedings Volume 12882, Optical Components and Materials XXI; 128820D (2024) https://doi.org/10.1117/12.2692976
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
A silicon-integrated Schottky metal-insulator-semiconductor plasmonic modulator with remarkable optical loss performance is demonstrated. The proposed device architecture is realized through the heterogeneous integration of amorphous aluminum, silica, and indium tin oxide, forming a metal-insulator-semiconductor plasmonic stack housed on an SOI substrate. The device exhibited extinction ratio and insertion loss levels of 1 dB/μm and 0.128 dB/μm, respectively for a 10 μm-long waveguide. By taking advantage of the absence of diffraction limits in plasmonic structures, strong modal confinement proved possible as evidenced by simulation results, paving the way for improved optical processes and miniaturized photonic circuits.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Nasir Alfaraj, Charles Chih-Chin Lin, Sherif Nasif, and Amr S. Helmy "CMOS-compatible MIS–Schottky heterojunctions for plasmonic waveguide modulation", Proc. SPIE 12882, Optical Components and Materials XXI, 128820D (8 March 2024); https://doi.org/10.1117/12.2692976
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KEYWORDS
Modulation

Capacitance

Heterojunctions

Plasmonics

Aluminum

Modulators

Optical modulators

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