Modeling of AlN/GaN superlattices for integration in near-UV distributed Bragg reflectors

A. Zorila; J. Jacquet; A. Ougazzaden; F. Genty

doi:10.1117/12.842074

25 February 2010 Modeling of AlN/GaN superlattices for integration in near-UV distributed Bragg reflectors

A. Zorila, J. Jacquet, A. Ougazzaden, F. Genty

Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 75970C (2010) https://doi.org/10.1117/12.842074
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

One of the main problem for the realization of high reflectivity GaN-based Bragg mirrors operating in the near-UV wavelength range is to limit the crack formation due to the lattice mismatch between the different nitride compounds while keeping a large refractive index contrast. Recent works have demonstrated that the introduction of several AlN/GaN superlattices (SLs) in a classical AlN/GaN quarter wavelength layers mirror structure strongly improved the crystalline quality and therefore the optical properties of such a mirror. In this work, several AlN/GaN SLs were studied for their direct use as pseudo-alloy layers pair material in a Bragg mirror. Such a configuration should allow combining the limitation of cracks by SLs with the improvement of the index contrast. First, the band structure of different AlN/GaN SLs was simulated using a self-consistent 8-band-k.p Schrödinger-Poisson solver. Then, the influence of surrounding layers such as AlN bulk ones on the band structure were considered. Using miniband-to-miniband transitions deduced from these calculations, refractive indices of these SLs were finally estimated for the design of an optimized high reflective Bragg mirror at 450 nm.

Citation Download Citation

A. Zorila, J. Jacquet, A. Ougazzaden, and F. Genty "Modeling of AlN/GaN superlattices for integration in near-UV distributed Bragg reflectors", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970C (25 February 2010); https://doi.org/10.1117/12.842074

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