Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions

C. Bayram; B. Fain; N. Péré-Laperne; Ryan P. McClintock; M. Razeghi

doi:10.1117/12.809829

26 January 2009 Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions

C. Bayram, B. Fain, N. Péré-Laperne, Ryan P. McClintock, M. Razeghi

Author Affiliations +

Proceedings Volume 7222, Quantum Sensing and Nanophotonic Devices VI; 722212 (2009) https://doi.org/10.1117/12.809829
Event: SPIE OPTO: Integrated Optoelectronic Devices, 2009, San Jose, California, United States

Abstract

A pulsed metalorganic chemical vapor deposition (MOCVD) technique, specifically designed for high quality AlN/GaN superlattices (SLs) is introduced. Optical quality and precise controllability over layer thicknesses are investigated. Indium is shown to improve interface and surface quality. An AlN/GaN SL designed for intersubband transition at a telecommunication wavelength of ~1.5 μm, is grown, and processed for intersubband (ISB) absorption measurements. Room temperature measurements show intersubband absorption centered at 1.49 μm. Minimal (n-type) silicon doping of the well is shown to be crucial for good ISB absorption characteristics. The potential to extend this technology into the far infrared and even the terahertz (THz) region is also discussed.

Citation Download Citation

C. Bayram, B. Fain, N. Péré-Laperne, Ryan P. McClintock, and M. Razeghi "Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions", Proc. SPIE 7222, Quantum Sensing and Nanophotonic Devices VI, 722212 (26 January 2009); https://doi.org/10.1117/12.809829

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