Improved particle control by adopting advanced ceramic materials in dry etcher for defect reduction

Dong-Soo Min; Guen-Ho Hwang; Dong-Heck Lee; Sang-Soo Choi; Hyo-Seok Son; Hyung-Jae Lee; Seung-Mun Son; Kyung-Ho Park

doi:10.1117/12.833515

23 September 2009 Improved particle control by adopting advanced ceramic materials in dry etcher for defect reduction

Dong-Soo Min, Guen-Ho Hwang, Dong-Heck Lee, Sang-Soo Choi, Hyo-Seok Son, Hyung-Jae Lee, Seung-Mun Son, Kyung-Ho Park

Proceedings Volume 7488, Photomask Technology 2009; 74882Z (2009) https://doi.org/10.1117/12.833515
Event: SPIE Photomask Technology, 2009, Monterey, California, United States

Abstract

As integration of circuits increases, required feature size becomes smaller and smaller. Defect control becomes tighter due to decrease in defect size that affects the images printed on the wafer and increase in possibility to be killer defect like 2-face bridge defect. Therefore, particle sources from all processes should be controlled extremely. Especially for dry etching process, Alumina ceramic has been widely used for plasma resistance material such as electrode covering plate and insulator. However, they can be etched under 'F' series plasma condition as well, even in small amounts. It has been reported that non-volatile by-products from etch ceramic can be particle sources to be killer defect. Therefore, selection of ceramic materials must be important for particle control in dry etch process. This paper pertains to testing etch resistance differences in Alumina (Al₂O₃) and Yttria (Y₂O₃) ceramic materials depending on various density and surface roughness. Ceramic surface microstructures change after plasma treatment was observed with scanning electron microscope (SEM) and ceramic erosion rate after plasma treatment was measured with surface profiler.

Citation Download Citation

Dong-Soo Min, Guen-Ho Hwang, Dong-Heck Lee, Sang-Soo Choi, Hyo-Seok Son, Hyung-Jae Lee, Seung-Mun Son, and Kyung-Ho Park "Improved particle control by adopting advanced ceramic materials in dry etcher for defect reduction", Proc. SPIE 7488, Photomask Technology 2009, 74882Z (23 September 2009); https://doi.org/10.1117/12.833515

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