Process latitude simulation of positive-tone litho-litho-etch double patterning

Wallace P. Printz; Steven A. Scheer

doi:10.1117/12.816581

1 April 2009 Process latitude simulation of positive-tone litho-litho-etch double patterning

Wallace P. Printz, Steven A. Scheer

Proceedings Volume 7273, Advances in Resist Materials and Processing Technology XXVI; 72731H (2009) https://doi.org/10.1117/12.816581
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Double patterning (DP) techniques are emerging as the dominant method to achieve the 32 nm node and beyond. While several DP approaches exist, the litho-litho-etch (LLE) process is attractive for reduced manufacturing cost.[1] Previously published LLE work explored the process latitude in the "positive/negative LLE" regime, wherein the first resist layer is imaged by positive-tone resist and the second resist layer is imaged in negative-tone.[2] In this paper, simulation-based techniques are used to determine the process latitude in the "positive/positive LLE" system. By using the same resist material for first- and second-pass lithography, optical properties are nearly matched. However, a conformal barrier film or other chemical modification must be applied to inhibit the solubility of the firstpass topography and maintain immiscibility between layers. The consequences of choosing a positive-tone resist for both the first- and second-pass are investigated for target CD at 88 nm pitch. Process latitude is characterized using full resist models, reaction-diffusion kinetic solvers, including diffusion-limiting boundary conditions.

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Wallace P. Printz and Steven A. Scheer "Process latitude simulation of positive-tone litho-litho-etch double patterning", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72731H (1 April 2009); https://doi.org/10.1117/12.816581

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KEYWORDS

Diffusion

Double patterning technology

Lithography

Photoresist processing

Fiber optic illuminators

Chemistry

Image processing

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