Developing loading effect on lithography I-line process

Thomas Huang; Walter Wang; Chun-Yen Huang; Nick Tseng; Ting-Jhen Guo; Chiang-Lin Shih; Wen-Bin Wu

doi:10.1117/12.804659

4 December 2008 Developing loading effect on lithography I-line process

Thomas Huang, Walter Wang, Chun-Yen Huang, Nick Tseng, Ting-Jhen Guo, Chiang-Lin Shih, Wen-Bin Wu

Proceedings Volume 7140, Lithography Asia 2008; 71403J (2008) https://doi.org/10.1117/12.804659
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

With recently semiconductor manufacturers Critical Dimension shrink down to 70nm and beyond, I-line layer CD would approach to it's resolution limitation. CD uniformity controling will be strongly influenced by developing process. Regarding I-line layer developing process, CD uniformity is always varying with various developing parameters setting (as nozzle design, developing time, pulse spin, etc).

Citation Download Citation

Thomas Huang, Walter Wang, Chun-Yen Huang, Nick Tseng, Ting-Jhen Guo, Chiang-Lin Shih, and Wen-Bin Wu "Developing loading effect on lithography I-line process", Proc. SPIE 7140, Lithography Asia 2008, 71403J (4 December 2008); https://doi.org/10.1117/12.804659

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