Paper
17 October 2008 Study of second-generation Proximity Gap Suction Development System (PGSD-II) for mask fabrication
Hideaki Sakurai, Masatoshi Terayama, Mari Sakai, Masamitsu Itoh, Osamu Ikenaga, Hideo Funakoshi, Norifumi Sato, Kenji Nakamizo, Masato Nomura, Yoshihiko Saito, Junji Nakao, Naoya Hayashi
Author Affiliations +
Abstract
Development process for 3x nm node devices and beyond is becoming a great issue in mask fabrication. The following items, such as uniformity, repeatability, loading effect and defect must be improved. To evolve the development process, TEL, DNP Omron and Toshiba have been jointly developed next generation equipment which is called "Second-generation PGSD (Gen.2)". In this paper, PGSD Gen.2 concept is introduced and its performance is reported.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Sakurai, Masatoshi Terayama, Mari Sakai, Masamitsu Itoh, Osamu Ikenaga, Hideo Funakoshi, Norifumi Sato, Kenji Nakamizo, Masato Nomura, Yoshihiko Saito, Junji Nakao, and Naoya Hayashi "Study of second-generation Proximity Gap Suction Development System (PGSD-II) for mask fabrication", Proc. SPIE 7122, Photomask Technology 2008, 71220D (17 October 2008); https://doi.org/10.1117/12.801424
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Particles

Mask making

Metals

Polonium

Liquids

Control systems

Error analysis

Back to Top