Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration

A. N. Kuturov; E. S. Soldatov; A. S. Stepanov

doi:10.1117/12.802416

29 April 2008 Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration

A. N. Kuturov, E. S. Soldatov, A. S. Stepanov

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250Q (2008) https://doi.org/10.1117/12.802416
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

The technique of metal electrodes' production with sub-10 nm gap on the base of the method of thin film breaking by the effect of metal atoms' electromigration is described. The technology of hard suspended mask and the method of two-shady evaporation are used for the creation of the samples of gold electrodes with thin (of about 10 nm) and narrow bridge between them by standard electron-beam lithography. Study of SEM images of implemented by electromigration gaps have revealed a large number of wide gaps (30-50 nm). It was explained by too large bridge thickness. However, the sub-5nm gaps were obtained on the samples with thinner bridge. I-V characteristics of these gaps have a shape typical for tunnel junctions. Information about gap parameters was obtained from the comparison of experimental I-V curves with theoretical ones calculated on the base of Simmons model of classical tunnel junction. It provide the estimation of parameters of real contact: gap width - 2-5 nm, potential barrier - of about 0.65 eV, the area of contacts - 200-300 nm². The obtained results demonstrate a possibility of creation of molecular single-electron transistor on the base of such nanostructures.

Citation Download Citation

A. N. Kuturov, E. S. Soldatov, and A. S. Stepanov "Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250Q (29 April 2008); https://doi.org/10.1117/12.802416

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