Paper
15 April 2008 Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results
Francis Houlihan, Alberto Dioses, Lin Zhang, Joseph Oberlander, Alexandra Krawicz, Sumathy Vasanthan, Meng Li, Yayi Wei, PingHung Lu, Mark Neisser
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Abstract
We will discuss our recent results using a second generation radiation sensitive developable 193 Bottom Antireflective coatings (DBARCs). These DBARC materials are made solvent resistant the application of a resist coating on top of them through a crosslinking mechanism that is reversible by acid catalyzed reaction upon exposure of the DBARC/resist stack. Typically this is done by crosslinking a copolymer containing a hydroxyl moiety with a polyfunctional vinylether during post applied bake. This DBARC approach, after exposure, allows for development of the stack in exposed areas down to the substrate eschewing the plasma etch breakthrough needed for conventional bottom antireflective coatings which are irreversibly crosslinked. We will give an update on the performance our latest 193 nm DBARC materials used with different Implant 193 nm resists when using a phase shift mask with off axis illumination.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francis Houlihan, Alberto Dioses, Lin Zhang, Joseph Oberlander, Alexandra Krawicz, Sumathy Vasanthan, Meng Li, Yayi Wei, PingHung Lu, and Mark Neisser "Second-generation radiation sensitive 193-nm developable bottom antireflective coatings (DBARC): recent results", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692330 (15 April 2008); https://doi.org/10.1117/12.781587
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Reflectivity

Polymers

Fourier transforms

Bottom antireflective coatings

Plasma etching

Coating

Reticles

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